发明名称 Laser Processing Method And Semiconductor Chip
摘要 A laser processing method is provided, which, even when a substrate formed with a laminate part including a plurality of functional devices is thick, can cut the substrate and laminate part with a high precision. This laser processing method irradiates a substrate 4 with laser light L while using a rear face 21 as a laser light entrance surface and locating a light-converging point P within the substrate 4 , so as to form modified regions 71, 72, 73 within the substrate 4 . Here, the quality modified region 71 is formed at a position where the distance between the front face 3 of the substrate 4 and the end part of the quality modified region 71 on the front face side is 5 mum to 15 mum. When the quality modified region 71 is formed at such a position, a laminate part 16 (constituted by interlayer insulating films 17 a , 17 b here) formed on the front face 3 of the substrate 4 is also cut along a line to cut with a high precision together with the substrate 4.
申请公布号 US2007290299(A1) 申请公布日期 2007.12.20
申请号 US20050594949 申请日期 2005.03.25
申请人 SAKAMOTO TAKESHI;FUKUMITSU KENSHI 发明人 SAKAMOTO TAKESHI;FUKUMITSU KENSHI
分类号 H01L21/02;B23K26/00;B23K26/40;H01L21/301 主分类号 H01L21/02
代理机构 代理人
主权项
地址