| 摘要 |
Film formation is conducted at a low temperature to improve conversion efficiency and productivity and to enable a wider choice of substrate materials to be used. The invention relates to the light absorption layer of a CIS compound semiconductor thin-film solar cell and to a method of forming the layer. The light absorption layer comprises a compound represented by Cu<SUB>x</SUB>(In<SUB>1-y</SUB>Ga<SUB>y</SUB>)(Se<SUB>1-z</SUB>S<SUB>z</SUB>)<SUB>2 </SUB>and having a chalcopyrite type structure, the proportions of the components satisfying 0.86<=x<=0.98, 0.05<=y<=0.25, 0<=z<=0.3, x=alphaT+beta, alpha=0.015y-0.00025, and beta=-7.9y+1.105, provided that T (° C.) is anneal temperature and the allowable range for x is ±0.02. The layer is formed by the selenization method at a low temperature (about 500<=T<=550). As the substrate is used a soda-lime glass having a low melting point.
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