| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high strength sputtering target for forming a protective film for a light recording medium. <P>SOLUTION: In the high strength sputtering target for forming a protective film for a light recording medium having a composition comprising, by mol, 10 to 70% zirconium oxide or hafnium oxide and ≤50% (not including 0%) silicon dioxide, and, if needed, comprising 0.1 to 8.4% yttrium oxide, and the balance aluminum oxide, lanthanum oxide or indium oxide with inevitable impurities, the target has a structure where a multiple oxide phase having a composition of Al<SB>6</SB>Si<SB>2</SB>O<SB>13</SB>, La<SB>2</SB>SiO<SB>5</SB>or In<SB>2</SB>Si<SB>2</SB>O<SB>7</SB>is formed in the base. <P>COPYRIGHT: (C)2008,JPO&INPIT |
