| 摘要 |
<P>PROBLEM TO BE SOLVED: To eliminate effect of a junction leak of a first conductivity-type semiconductor region included in a write transistor. <P>SOLUTION: A semiconductor memory device includes a data input/output part (write transistor WT, amplifier transistor AT, select transistor ST, and first storage node SN1) having a memory cell MCc in which a first conductivity-type semiconductor region (source-drain region 6) is provided, inputting data into the source-drain region 6 to store the data by electrically floating it, and outputting the data according to the stored data; an MIS capacitor SC imparting an electric field capable of forming a first conductivity-type inversion layer IL to a second conductivity-type semiconductor region 1A apart from the source-drain region 6; and a charge transfer gate 3 controlling charge transfer between the second conductivity-type semiconductor region 1A and the source-drain region 6. <P>COPYRIGHT: (C)2008,JPO&INPIT |
