| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a capacitor having an MIM structure which can be reduced in leakage current and can be suppressed with a farther decrease in dielectric constant than ever before while securing the reliability, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device is equipped with the capacitor 51 having an MIM structure which consists of a capacitive insulation film 15 formed of an amorphous hafnium oxide, and a top electrode 16 and a bottom electrode 14 which each consist of a metal film and are arranged on both sides of the capacitive insulation film 15. The amorphous hafnium oxide is formed by so-called ALD method wherein, after low temperature adsorption of vapor phase reaction products in sequence, the vapor phase reaction products are deposited by low temperature oxidation. After the deposition of the amorphous hafnium oxide by ALD method, the amorphous hafnium oxide is re-oxidized by an oxygen radical generated by low temperature remote plasma, etc., to obtain an amorphous hafnium oxide film having little dopant. <P>COPYRIGHT: (C)2008,JPO&INPIT |
