| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved image forming method through reaction development by which a negative photoresist can be efficiently produced. <P>SOLUTION: A photoresist layer containing a condensation polymer containing a carbonyl group (C=O) bonded to a hetero atom in the main chain thereof, an anion regenerant such as an N-substituted maleimide compound and a photoacid generator such as diazonaphthoquinone is disposed on a substrate and masked with a desired pattern, this pattern surface is irradiated with ultraviolet radiation, and development is performed with a developer comprising tetra-substituted ammonium hydroxide, a low molecular alcohol and a water-containing solvent. Exposed and unexposed portions of the photoresist layer after the irradiation with ultraviolet radiation are noticeably different in solubility in the developer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
