| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is provided with an element isolation area with enhanced withstand voltage in a junction region, and to provide its manufacturing method. SOLUTION: The semiconductor device is provided with a first conductive first impurity region 107 which is formed under an element isolation insulation film 106 in a semiconductor substrate 100, a second conductive second impurity region 114 formed in an element formation region in the semiconductor substrate, a first conductive third impurity region 108 which is formed adjacent to the first impurity region in a region between the first and second impurity regions in the semiconductor substrate, and a second conductive fourth impurity region 115 which is formed adjacent to the second impurity region and the third impurity region in an area between the second and third impurity regions in the semiconductor substrate. The third impurity region 108 is lower in impurity concentration of the first conductive impurity than the first impurity region 107, and the fourth impurity region 115 is lower in impurity concentration of the second conductive impurity than the second impurity region 114. COPYRIGHT: (C)2008,JPO&INPIT
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