MANUFACTURING METHOD OF SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon wafer by which occurrence of the slip due to high temperature process is perfectly controlled while an active region of element is provided with a uniform and sufficient DZ and COP-free region, and further a bulk region has a high-density BMD. SOLUTION: This method includes: a step for maintaining a silicon wafer at a first temperature in an inert gas atmosphere while a specified time to preheat; a step for raising to a second temperature higher than the first temperature at a first pace of temperature rise in a hydrogen atmosphere; a step for raising to a third temperature higher than the second temperature at a second pace of temperature rise smaller than the first pace of temperature rise; a step for raising to a fourth temperature higher than the third temperature at a third pace of temperature rise in the inert gas atmosphere; and a step for heat-treating at the high temperature while keeping at the fourth temperature. The number of LPDN (Light Point Defects Non-cleanable) relating defects having the size of 0.065μm or more which is measured after polishing the wafer to a specified depth descending the temperature to the first temperature is 20 or less per wafer. COPYRIGHT: (C)2008,JPO&INPIT