| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emission semiconductor laser device in which variation in optical output is suppressed through self compensation of temperature variation. SOLUTION: The surface-emission semiconductor laser device 10 comprises a laser element 34 including an n-type multilayer film reflector 24, an active layer 26 and a p-type multilayer film reflector 28 formed on a substrate 20, and a light absorption-thermal conversion region 50 for generating heat by absorbing light located contiguously to the laser element 34. The light absorption-thermal conversion region 50 is thermally coupled with the laser element 34, and performs self compensation of temperature characteristics of the optical output from the laser element 34. COPYRIGHT: (C)2008,JPO&INPIT
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