| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor laser in which the interface of a GaAs semiconductor region and an InGaAs semiconductor region can be made more steep. SOLUTION: A GaAs region 37 is grown on a first group III-V compound semiconductor 35 at a substrate temperature in the range of 530-600°C. After growing a GaAs region 37a, temperature is altered to a range of 450-490°C without supplying a film deposition material. After altering that temperature, a GaAs thin film 37b is grown. Thereafter, a well layer 39 composed of a second group III-V compound semiconductor containing indium is grown on the GaAs thin film 37b using molecular beam epitaxy. The GaAs thin film 37b is thicker than the GaAs region 37a. COPYRIGHT: (C)2008,JPO&INPIT
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