| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a reference voltage generation device for a semiconductor memory where reference voltage can be changed freely to a desired level from outside. <P>SOLUTION: The device comprises a resistance value control unit which adjusts adjustment codes so that one or more resistance sets whose resistance value is decided with the one or more adjustment codes may have a prescribed resistance value, a voltage level control unit which generates and outputs a selection code for selecting a final reference voltage level by external control, and a reference voltage generation unit which changes power voltage with the adjustment code and the selection code and outputs the final reference voltage. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
