发明名称 |
SYSTEM FOR OPERATING NON-VOLATILE MEMORY USING TEMPERATURE COMPENSATION OF VOLTAGES OF UNSELECTED WORD LINES AND SELECT GATES |
摘要 |
Reading and verify operations are performed on non-volatile storage elements using temperature-compensated read voltages for unselected word lines, and/or for select gates such as drain or source side select gates of a NAND string. In one approach, while a read or verify voltage is applied to a selected word line, temperature-compensated read voltages are applied to unselected word lines and select gates. Word lines which directly neighbor the selected word line can receive a voltage which is not temperature compensated, or which is temperature-compensated to a reduced degree. The read or verify voltage applied to the selected word line can also be temperature-compensated. The temperature compensation may also account for word line position.
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申请公布号 |
US2007291567(A1) |
申请公布日期 |
2007.12.20 |
申请号 |
US20060424812 |
申请日期 |
2006.06.16 |
申请人 |
MOKHLESI NIMA;ZHAO DENGTAO |
发明人 |
MOKHLESI NIMA;ZHAO DENGTAO |
分类号 |
G11C16/06;G11C7/04;G11C11/34 |
主分类号 |
G11C16/06 |
代理机构 |
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