发明名称 |
METHOD FOR FORMING METAL WIRING, MANUFACTURING METHOD OF ACTIVE MATRIX SUBSTRATE, DEVICE, ELECTRO-OPTIC DEVICE, AND ELECTRONIC EQUIPMENT |
摘要 |
PROBLEM TO BE SOLVED: To suppress deterioration of planarity in metal wiring to obtain predetermined characteristics. SOLUTION: A method of forming metal wiring to be disclosed comprises a step of forming banks 34 having first openings (first pattern forming regions 55) that correspond to first film patterns (gate wiring 40); and second openings (second pattern forming regions 56) that correspond to second film patterns (gate electrodes 41) respectively connected to the first film patterns (40), and having a smaller width than those of the first film patterns (40); a step of arranging liquid drops of a functional liquid L2 in the first openings (55), and arranging the functional liquid L2 in the second openings (56) by self-flowing of the functional liquid L2; and a step of curing the functional liquid L2 arranged in the first openings (55) and second openings (56). The first film patterns (40) and second film patterns (41) are formed by repeating the step of applying liquid drops and the step of curing the functional liquid for every drop of the liquid a plurality of times. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2007329446(A) |
申请公布日期 |
2007.12.20 |
申请号 |
JP20060332894 |
申请日期 |
2006.12.11 |
申请人 |
SEIKO EPSON CORP |
发明人 |
HIRAI TOSHIMITSU;MORIYA KATSUYUKI |
分类号 |
H01L21/3205;G02F1/1343;G02F1/1345;G02F1/1368;G09F9/00;G09F9/30;H01L21/336;H01L29/786 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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