| 摘要 |
A semiconductor device may include a semiconductor substrate having a trench, a device isolation layer filling the trench, and a liner nitride layer disposed between the semiconductor substrate and the device isolation layer. The device isolation layer may additionally cover a portion of the substrate surrounding the trench. The liner nitride layer may have an upper portion and a lower portion, wherein the upper portion may be thinner than the lower portion. The liner nitride layer may reduce or prevent a recess from being generated between an active region and a device isolation region. Accordingly, a relatively high-quality semiconductor device may be fabricated using a simplified process.
|
