| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element with less spontaneous emission light. <P>SOLUTION: This laser element includes: a substrate; a semiconductor which is formed on the top surface of the substrate while containing active layer and a ridge structure of stripe shape; and a light absorbing part provided above the semiconductor. In the laser element, an oscillating direction of a laser beam is the stripe direction of the ridge structure. The light absorbing part is provided apart from a lower end of the ridge structure in a transverse direction so as not to absorb a basic mode or a higher-order mode of the laser beam, has a characteristics absorbing the light in a wavelength range including the wavelength of the laser beam, and is made of a metal or a semiconductor having a refraction index smaller than that of the above semiconductor. <P>COPYRIGHT: (C)2008,JPO&INPIT |
