| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electron-beam lithography method that enables to improve productivity while improving effective throughput when performing alignment lithography in an electron-beam lithography device. <P>SOLUTION: A charged-particle-beam lithography method includes steps of (S104) lithographing a deviation measurement pattern on a resist film, which is applied on a substrate to be processed formed with a ground mark, by using a correction factor; (S106) scanning the ground mark and deviation measurement pattern with a charged particle beam, respectively so as to calculate a position of the ground mark, and that of the deviation measurement pattern; (S107) calculating an alignment deviation amount on the basis of the position of the ground mark, and that of the deviation measurement pattern; (S109) correcting the correction factor on the basis of the alignment deviation amount; and (S110) performing lithography by using the correction factor. <P>COPYRIGHT: (C)2008,JPO&INPIT |
