| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element for radiating a mixed color light having a high yield and small variation in characteristics. <P>SOLUTION: A GaN-based light-emitting layer 3 is formed on an MGC 2 (melt growth composite) consisting of a Y<SB>3</SB>Al<SB>5</SB>O<SB>12</SB>single crystal phase 21 and an Al<SB>2</SB>O<SB>3</SB>single crystal phase 22, and Ce<SP>3+</SP>ions are doped in the Y<SB>3</SB>Al<SB>5</SB>O<SB>12</SB>single crystal phase 21. In this way, a blue light radiated from the light-emitting layer 3 is transmitted through the Al<SB>2</SB>O<SB>3</SB>single crystal phase 22, passes through the Y<SB>3</SB>Al<SB>5</SB>O<SB>12</SB>single crystal phase 21, and excites the Ce<SP>3+</SP>ions to radiate a yellow light. The blue and yellow lights are mixed, thereby obtaining a white light. Also, the characteristics of the light-emitting element can be controlled by adjusting the thickness of the MGC 2. <P>COPYRIGHT: (C)2008,JPO&INPIT |
