| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor lamination having a hexagonal boron nitride single crystal film, and to provide a manufacturing method thereof. <P>SOLUTION: The semiconductor lamination comprises an SiC single crystal substrate, a graphite layer formed on the surface of that substrate, and the hexagonal boron nitride single crystal film formed on the graphite layer. Further, this semiconductor lamination can be manufactured by the manufacturing method comprising the steps of forming the lamination of the SiC single crystal substrate and the graphite layer, by evaporating the Si in at least the uppermost surface of a predetermined surface of the SiC single crystal substrate, and hetero-epitaxially growing the hexagonal boron nitride single crystal film on the graphite layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
