THIN FILM SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND DISPLAY

摘要

A method of manufacturing a thin film semiconductor device is disclosed. The method includes the steps of: forming a light reflection and absorption layer for reflecting and absorbing light on a substrate; patterning the light reflection and absorption layer in a prescribed shape; forming an insulating film covering the patterned light reflection and absorption layer; forming a semiconductor thin film containing a polycrystalline grain on the insulating film; and laser annealing the semiconductor thin film by irradiating pulse oscillated laser light to crystallize the semiconductor thin film. The laser annealing step includes a heating process, and a cooling process.