| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal capable of growing a single crystal of a desired crystal polymorphism such as 4H-type SiC. SOLUTION: In a method for producing a silicon carbide single crystal by arranging a seed crystal consisting of silicon carbide in a reaction vessel and growing a single crystal consisting of silicon carbide on the surface of the seed crystal using a raw material gas containing a Si component and a C component introduced into the reaction vessel, the Si/C ratio of the charged raw materials is set higher at an initial growth stage of the single crystal than at a high speed growth stage of the single crystal by setting the Si/C ratio of the charged raw materials at about 2.2 at the initial growth stage of the single crystal from t7 to t8 and at about 1 at the high speed growth stage from t8 to t9. Thereby, a SiC single crystal having the same polymorphism as a SiC seed crystal can be grown stably. COPYRIGHT: (C)2008,JPO&INPIT
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