CMOS DEVICE HAVING HYBRID CHANNEL ORIENTATION, AND METHOD FOR MANUFACTURING CMOS DEVICE HAVING HYBRID CHANNEL ORIENTATION USING FACET EPITAXY PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate having different surface orientations (namely, hybrid surface orientation). SOLUTION: In the semiconductor substrate, a first device area 2 has a substantially flat surface 16A which is oriented to one orientation of group of first equivalent crystal surfaces, and a second device area contains a protrusive semiconductor structure 18 having a plurality of cross surfaces 16B which are oriented to an orientation of group of other equivalent crystal surfaces. A semiconductor device structure can be formed using such a semiconductor substrate. Particularly, a first field-effect transistor (FET) can be formed in the first device area, the first FET contains a channel which is located along a substantially flat surface in the first device area. A second complementary FET can be formed in the second device area, and the second complementary FET contains a channel which is located along the plurality of cross surfaces of the protrusive semiconductor structure in the second device area. COPYRIGHT: (C)2008,JPO&INPIT