| 摘要 |
Each memory cell of an MRAM that uses toggle writing is written by applying to the memory cell a first field, then a combination of the first field and the second field, then the second field. The removal of the second field ultimately completes the writing of the memory cell. The combination of the first field and the second field is known to saturate a portion, the synthetic antiferromagnet (SAF), of the MRAM cell being written. This can result in not knowing which logic state is ultimately written. This is known to be worsened at higher temperatures. To avoid this deleterious saturation, the magnetic field is reduced during the time when both fields are applied. This is achieved by reducing the current that provides these fields from the current that is applied when only one of the fields is applied.
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