发明名称 SURFACE MODIFYING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a surface modifying method which can obtain a suitable surface modifying effect with a low-cost process. <P>SOLUTION: A surface modifying process of processing a mounting object 4 includes a substrate having an insulating film of a resin such as polyimide formed thereon, and also includes a semiconductor chip mounted on the substrate for the purpose of increasing an adhesion between the insulating film and the sealing resin. The mounting object 4 is accommodated in a vacuumed processing chamber 7 of a surface modifying apparatus 5, to cause hydrogen atoms generated from a hydrogen gas by a hydrogen atom generating device 20 to come into contact with the resin surface of the insulating film of the mounting object 4. The chemical bonding on the resin surface is cut off by the activating action of hydrogen atoms, thus generating a hydrophilic reaction group such as a carbonyl group on the resin surface and increasing a wetting property. Consequently, the surface modifying effect can be obtained by the low-cost process more suitably than the prior art surface modifying effect based on a plasma process. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007329307(A) 申请公布日期 2007.12.20
申请号 JP20060159451 申请日期 2006.06.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MORISAKO ISAMU;ARITA KIYOSHI;HAJI HIROSHI
分类号 H01L21/56 主分类号 H01L21/56
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