| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a compound semiconductor layer on silicon equipped with an Si nanowire buffer layer. SOLUTION: In the method, an insulator layer 104 is formed on a silicon substrate 102, equipped with Si-nanowires 106 each tip end of which is exposed, to cover the substrate 102. The compound semiconductor 110 is selectively deposited on the tip end 108 of each Si nanowire. The compound semiconductor is grown from the tip end of each Si nanowire coated with the compound semiconductor so that the compound semiconductor covering the insulator is formed by lateral epitaxial overgrowth (LEO) process. Generally, the insulator layer covering the Si substrate is a thermosoftening insulator (TSI), silicon dioxide or SixNy (wherein, x is≤3 and y is≤4). The compound semiconductor may be GaN, GaAs, GaAlN or SiC. COPYRIGHT: (C)2008,JPO&INPIT
|
