| 摘要 |
[Problem] To provide a method that can determine a thermal property of a substrate in a short time and a method that can determine a thermal process condition of an open-loop step. [Solving Means] In accordance with the substrate thermal property determining method of the present invention in a rapid thermal processing apparatus 1 comprising lamps 9 for heating a wafer W and temperature sensors T 1 to T 7 arranged so as to oppose the lamps 9 , temperature data sequentially outputted from the temperature sensors T 1 to T 7 is obtained, while subjecting the wafer W arranged between the lamps 9 and temperature sensors T 1 to T 7 to pulsed heating with the lamps 9 . Thereafter, the thermal property of the wafer W is determined by using the temperature data.
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