| 摘要 |
A method for fabricating a semiconductor device is provided to dispose a feeding line for electroplating in every land part by using an interconnection substrate having a common interconnection for feeding in an inner region of a bonding electrode. A plurality of bonding electrodes are formed on a main surface(3a) of an interconnection substrate(3). A plurality of land parts are formed on the back surface confronting the main surface. A common interconnection for feeding is formed in the inner region of the bonding electrode. A plurality of feeding interconnections are electrically connected to the common interconnection. After power is fed through the feeding interconnection to plate each interconnection and electrode, the common interconnection is separated from the feeding interconnection to prepare the interconnection substrate. A semiconductor chip is mounted on the main surface of the interconnection substrate. An electrode of the semiconductor chip is electrically connected to the bonding electrode of the interconnection substrate. An external terminal is formed at the land part of the interconnection substrate. The common interconnection can be a ring shape. The interconnection substrate can be a substrate from which the common interconnection of the ring shape and its internal region are removed. |
