| 摘要 |
PROBLEM TO BE SOLVED: To inhibit disturbance of a far field pattern and a shift of an optical axis. SOLUTION: A method of manufacturing a semiconductor laser element includes a step of preparing a semiconductor substrate having a multilayer growth layer including an active layer, and a step of forming a mask on the multilayer growth layer to form a striped ridge by dry-etching and wet-etching. In order to reduce a skirt occurring during the dry-etching by the wet-etching, a structure is formed in which a p-type AlGaINp layer, an etching stop layer, a p-type Al<SB>x=0.7</SB>GaInP layer, a p-type Al<SB>x=0.6</SB>GaInP layer, and a p-type GaAs layer are sequentially laminated. The skirt is formed of the p-type Al<SB>x=0.7</SB>GaInP layer with a high mixed crystal ratio. Since the p-type Al<SB>x=0.7</SB>GaInP layer is therefore etched faster than the p-type Al<SB>x=0.6</SB>GaInP layer during the wet-etching, the skirt gets small, resulting in no disturbance in the far field pattern of the semiconductor laser element and no shift in the optical axis occurring. COPYRIGHT: (C)2008,JPO&INPIT
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