发明名称 |
PROGRAMMABLE MEMORY DEVICE, INTEGRATED CIRCUIT INCLUDING THE PROGRAMMABLE MEMORY DEVICE, AND METHOD OF FABRICATING SAME |
摘要 |
An integrated circuit comprises a memory device including an isolation layer for defining an active area of a substrate, a tunnel oxide layer formed on the active area, a floating gate formed over the active area and the isolation layer, an inter-gate dielectric layer formed on the floating gate, and a control gate formed on the inter-gate dielectric layer. The integrated circuit also includes a high and low voltage transistors.
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申请公布号 |
US2007290252(A1) |
申请公布日期 |
2007.12.20 |
申请号 |
US20070745052 |
申请日期 |
2007.05.07 |
申请人 |
KOO JEOUNG-MO;OH HEE-SEON |
发明人 |
KOO JEOUNG-MO;OH HEE-SEON |
分类号 |
H01L27/10;H01L29/788;H01L21/336;H01L21/82;H01L21/8247;H01L27/02;H01L27/105;H01L27/115;H01L29/423;H01L29/792 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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