| 摘要 |
A semiconductor arrangement for an integrated circuit is provided that includes a first region in which a number of components are formed, a second region, a buried insulating layer for vertically insulating the first region, an insulating structure, which is formed between the first region and the second region for laterally insulating the first region from the second region. The insulating structure can have a trench structure with a dielectric and a conductor structure with a semiconductor material. Whereby the trench structure borders on the buried insulating layer, and the conductor structure is designed to conductively connect the first region to the second region.
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