Metal-organic vaporizing and feeding apparatus, metal-organic chemical vapor deposition apparatus, metal-organic chemical vapor deposition method, gas flow rate regulator, semiconductor manufacturing apparatus, and semiconductor manufacturing method

摘要

A metal-organic vaporizing and feeding apparatus includes: a retention vessel for retaining a metal-organic material; a bubbling gas feeding path connected to the retention vessel, for feeding bubbling gas to the metal-organic material; a metal-organic gas feeding path connected to the retention vessel, for feeding metal-organic gas generated in the retention vessel and dilution gas to a deposition chamber; a dilution gas feeding path connected to the metal-organic gas feeding path, for feeding the dilution gas to the metal-organic gas feeding path; a flow rate regulator provided in the bubbling gas feeding path, for regulating flow rate of the bubbling gas; a pressure regulator for regulating pressure of the dilution gas; and a sonic nozzle disposed in the metal-organic gas feeding path on a downstream side of a connecting position between the metal-organic gas feeding path and the dilution gas feeding path.