METAL LINE OF SEMICONDUCTOR DEVI CE AND METHOD FOR FORMING THE SAME

摘要

A metal interconnection of a semiconductor device is provided to prevent a metal interconnection and a contact plug from being short-circuited by forming a metal oxide layer on both lateral surfaces of the metal interconnection. A metal interconnection(120) is formed on a semiconductor substrate. A hard mask pattern(130) comes in contact with the upper surface of the metal interconnection. Both lateral surfaces of the metal interconnection is oxidized to form a metal oxide layer(140). Spacers(150) are formed on both sides of the hard mask pattern and the metal oxide layer. A contact plug(170) can be positioned between the metal interconnection wherein both lateral surfaces of the contact plug come in contact with the spacer.