| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: invention concerns metallurgy field and can be used for receiving of metals from its oxides and also silicon from its oxide. Method of receiving metal or silicon consists in its oxides reduction. Reduction is implemented by means of treatment by electronic beam of powder of metal oxide or silicon oxide on the surface of metal melt or silicon melt. Process is implemented at current density in beam 5-12 mA/mm2, accelerating potential 15-35 kV and in vacuum 10-4-10-5 mm of mercury. ^ EFFECT: reduction of electric power consumption and receiving of metal or silicon in the form of solid ingot, nonpolluted by admixtures. ^ 3 cl, 1 dwg, 8 ex |
