| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resin suitably employable for a positive-type resist composition that is improved in defective development, and exhibits a good follow-up property to water and good line edge roughness on immersion exposure, a positive-type resist composition comprising the resin, a protecting film-forming composition comprising the resin, a pattern-forming method using the positive-type resist composition, and a pattern-forming method using the protecting film-forming composition. <P>SOLUTION: The resin has at least either one of a fluorine atom and a silicon atom, and a -CONHSO<SB>2</SB>- group. The positive-type resist composition comprises the resin. The protecting film-forming composition comprises the resin. The pattern-forming method comprises using the positive-type resist composition. The pattern-forming method comprises using the protecting film-forming composition. <P>COPYRIGHT: (C)2008,JPO&INPIT |
