| 摘要 |
A stable moisture-resisting film is formed on the surface of a semi-conductor body etched in a solution containing hydrofluoric acid by quenching in a solution containing an organic liquid having in its chemical structure a reactive hydroxyl group. Semi conductors referred to are germanium, silicon, germanium-silicon alloys, indium antimonide, gallium arsenide, gallium and indium-phosphorus alloys. In an example a semi-conductor silicon body is immersed in an etchant solution containing hydrofluoric, nitric and acetic acids and a small quantity of a non-ionic wetting agent, e.g. a nonyl ester of polyethylene glycol. The body is then transferred from the etch within one half-second to a quenching solution which contains a mono- or polyhydric aliphatic alcohol. As the body is removed from the etch a hydrophilic film begins to form due to Si-OH linkages at the surface. In the alcohol however the formation of the linkages is inhibited and the hydrophobic Si-OR linkage is formed. A scavenging compound, a list of which is given in the Specification may be included in the quenching solution. During aluminium alloy dioide experiments a rapid quench was achieved by adding a large volume of ethanol to a polythene beaker in which the etch is performed. The Specification includes a list of suitable etch solutions. |
