| 摘要 |
A power semiconductor module having an electrically insulated connection device is provided to improve internal insulation by completely receiving a load connection device except areas of external and internal contact devices in an insulator. A power semiconductor module includes at least one substrate(5), at least two power semiconductor components(60) disposed in the substrate, a housing and load connection devices confronting the outside. The substrate includes an insulator body. A first main region of the insulator body confronting the inside of the power semiconductor module includes an interconnection(54) of a load potential disposed in the first main region. The load connection devices have a body shape made of metal, including external contact devices(404,424,444), band-shaped areas(422) and internal contact devices(400,420) starting from the band-shaped area. The internal contact devices are extended from the band-shaped areas to the substrate, coming in contact with the substrate by a circuit-compliant method. The load connection devices in a region except the external and internal contact devices are received in an insulator(428), electrically insulated from each other. The insulators can be disposed by using a dipping process or an injection-molding process. |
