| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device using a group III-V nitride semiconductor having ohmic electrodes whose contact resistances are made small. SOLUTION: The semiconductor device has first and second group III-V nitride semiconductor layers 12, 13 and ohmic electrodes 14 which are formed in succession on a substrate 11. The band gap of the second group III-V nitride semiconductor layer 13 is made larger than the one of the first group III-V nitride semiconductor layer 12. The lower portion of each ohmic electrode 14 is so formed as to pierce the second group III-V nitride semiconductor layer 13, and as to reach the region of the lower side than the two-dimensional electron-gas layer of the first group III-V nitride semiconductor layer 12. In the portions of the first and second group III-V nitride semiconductor layers 12, 13 wherewith the respective ohmic electrodes 14 are contacted, an impurity doped layer 18 is formed. COPYRIGHT: (C)2008,JPO&INPIT |
