| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having excellent charge retention property and the method of manufacturing the same, by improving the leak property of an insulating film between a charge storage layer and a control gate electrode. SOLUTION: A semiconductor memory device comprises: a first insulating film formed on a semiconductor substrate; a first electrode provided on the first insulating film; a second insulating film provided on the first electrode; a second electrode provided on the second insulating film; and diffusion layers provided in the semiconductor substrate such that the first and second electrodes stand therebetween. The second insulating film comprises a silicon nitride film comprising more silicon than stoichiometric composition, and a silicon oxide film formed on the silicon nitride film. In the silicon nitride film, a fraction of nitride density in silicon density is equal to or more than 0.9 and equal to or less than 1.2 (SiNx: 0.9≤x≤1.2). COPYRIGHT: (C)2008,JPO&INPIT
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