| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensing element that can improve while defect and read characteristic, and also to provide a method for manufacturing the solid-state image sensing element. SOLUTION: The solid-state image sensing element includes a semiconductor substrate 11, a photoelectric converter formed on the semiconductor substrate 11, a charge transfer 31 for transferring charges generated by the photoelectric converter, a first charge transfer electrode 17, and a second charge transfer electrode 21. In the method for manufacturing this solid-state image sensing element; a silicon oxide film 13, a silicon nitride film 14, and a silicon oxide film 15 are sequentially laminated on the semiconductor substrate 11 to form a gate insulating film 12. A part 16 where the silicon nitride film 14 is not provided is formed on the charge transfer 31, a first charge transfer electrode 17 is patterned, and an upper silicon nitride layer 18 is also formed on the part 16 extruded from the first charge transfer electrode 17. Thereafter, a second charge transfer electrode 21 is patterned. COPYRIGHT: (C)2008,JPO&INPIT
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