发明名称 |
Substrate Processing Method and Substrate Processing Apparatus |
摘要 |
Disclosed is a substrate processing method in which a plurality of processing gases are alternately supplied to and exhausted from a processing chamber forming a space in which a substrate or substrates are to be processed to form a desired thin film on the substrate or each of the substrates comprising transferring the substrate or the substrates into the processing chamber, and controlling a supply time of one of the plurality of the processing gases to control an amount of a chemical species which exists in the thin film and the existing amount of which a film stress depends on, thereby controlling the film stress of the thin film.
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申请公布号 |
US2007292974(A1) |
申请公布日期 |
2007.12.20 |
申请号 |
US20060664282 |
申请日期 |
2006.01.27 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
MIZUNO NORIKAZU;SATO TAKETOSHI;SAKAI MASANORI;OKUDA KAZUYUKI |
分类号 |
B05C11/00;H01L21/00 |
主分类号 |
B05C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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