发明名称 |
Semiconductor device with a trench isolation and method of manufacturing trenches in a semiconductor body |
摘要 |
<p>As a first step a novel low cost integration method for a plurality of deep isolation trenches on the same chip is provided. The trenches have an additional n-type or p-type doped region surrounding the trench - silicon interface. Providing such variations of doping the trench interface is achieved by using implantation masking layers or doped glass films structured by a simple resist mask. By simple layout variation of the top dimension of the trench various trench depths at the same time can be ensured. Using this method, wider trenches will be deeper and smaller trenches will be shallower.</p> |
申请公布号 |
EP1868239(A1) |
申请公布日期 |
2007.12.19 |
申请号 |
EP20060012076 |
申请日期 |
2006.06.12 |
申请人 |
AUSTRIAMICROSYSTEMS AG |
发明人 |
PARK, JONG MUN;SCHREMS, MARTIN |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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