Method for fabricating a semiconductor photosensor

摘要

A method for the manufacture of a pn-junction in a semiconductor component involves forming a first and a second zone (5.1,5.2) of a second conductivity type within a zone (1) of a first conductivity type by implantation and then combining, by successive diffusion processes, the first and second zones (5.1,5.2) into a continuous well (10) and then by implantation, a further zone (12) of the first conductivity type is formed and fully overlaps the first zone (5.1) of the second conductivity type and is larger than the second zone (5.2) of the second conductivity type.