High frequency MOS device and manufacturing process thereof

摘要

MOS device (1) formed in a semiconductor body (2) having a first conductivity type and a surface (7) and housing a first current-conduction region (3) and a second current-conduction region (4), of a second conductivity type. The first and second current-conduction regions (3, 4) define between them a channel (5), arranged below a gate region (10), formed on top of the surface (7) and electrically insulated from the channel region (5). A conductive region (12) extends on top of a portion (5a) of the channel (5), adjacent to and insulated from the gate region only on a side thereof facing the first current-conduction region (3). The conductive region (12) is biased so as to modulate the current flowing in the channel (5).