| 摘要 |
A magnetoresistance device (1) exhibiting the extraordinary magnetoresistance effect (EMR) includes an elongate channel (2) formed of silicon. A conductor (6) comprising titanium silicide, which acts as a shunt, is connected to the channel along one side of the channel and leads (8 1 , 8 2 , 8 3 , 8 4 , 8 5 , 8 6 ) are connected to and spaced along the channel on the opposite side.
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