发明名称
摘要 PROBLEM TO BE SOLVED: To provide the photosensitive resin composition capable of forming a resist pattern small in light absorption in specified wavelengths and superior in light transmittance and high in resolution and superior in resistance to dry etching by incorporating a inonomer having an aromatic ring with at least one N atom on the ester part of a specifued methacrylate ester in the resin composition. SOLUTION: This composition contains the polymethacrylate ester derived from the methacrylate ester monomer including the one having at least one N atom on an aromatic ring in the ester part, thus permitting the obtained polymer to be reduced in light absorption due to theπbond of the aromatic ring in the wavelength region near 193 nm.
申请公布号 JP4023867(B2) 申请公布日期 2007.12.19
申请号 JP19970119911 申请日期 1997.05.09
申请人 发明人
分类号 G03F7/039;C08F20/34;C08F220/12;H01L21/027 主分类号 G03F7/039
代理机构 代理人
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