发明名称 |
Semiconductor device |
摘要 |
In a semiconductor device, bonding-wires can be applied parallel to each other to electrodes of high-speed signal lines when mounting a highly densified semiconductor element on a low-cost substrate while reducing a length of the bonding-wires. An impedance-matched substrate (6) having wiring that impedance-matched with circuits of a semiconductor element (4) is mounted on a substrate (2). A plurality of first metal wires (12) connect between first electrodes (4a) of the semiconductor element (2) and electrodes (2a) of the substrate. A plurality of second metal wires (14) connect between second electrodes (4b) of the semiconductor element (2) and first electrodes (6a) of the impedance-matched substrate (6). A plurality of third metal wires (16) connect between second electrodes (6b) of the impedance-matched substrate (6) and electrodes (2a) of the substrate (2). The second metal wires (14) extend parallel to each other, and the third metal wires (16) also extend parallel to each other. |
申请公布号 |
EP1605506(A3) |
申请公布日期 |
2007.12.19 |
申请号 |
EP20040256218 |
申请日期 |
2004.10.08 |
申请人 |
FUJITSU LIMITED |
发明人 |
TSUJI, KAZUTO;KUBOTA, YOSHIHIRO;ASADA, KENJI;HOSOYAMADA, SUMIKAZU |
分类号 |
H01L23/12;H01L23/66;H01L21/60;H01L21/607;H01L23/48;H01L23/498;H01L23/552 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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