Method for improving reliability of copper interconnects

摘要

Doping copper interconnects ( 100 ) with silicon ( 115 ) has been shown to improve Electromigration and Via Stress Migration reliability. After copper ( 118 ) is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiH₄ over the copper interconnect ( 100 ) for 0.5 to 5 seconds at a temperature of 325-425° C.