AN ELECTRON BEAM APPARATUS AND AN ABERRATION CORRECTION OPTICAL APPARATUS

摘要

An electron beam apparatus is provided to estimate a sample like a semiconductor wafer including a micro pattern with high throughput and a minimum line width not greater than 0.1 mum by including an electron gun for generating a primary electron beam narrowly converged wherein the electron gun allows low brightness and high emittance. An electron beam apparatus includes an electron gun(61) and an image projection optical system. A primary electron beam(64) generated by the electron gun is irradiated to the surface of a sample. Secondary electrons emitted from the sample are formed as an image on a detector by the image projection optical system. The electron gun includes a cathode and a drawing electrode(3). The cathode includes an electron emission surface made of a concave surface.