| 摘要 |
A semiconductor component comprises a first semiconductor region ( 110, 310 ), a second semiconductor region ( 120, 320 ) above the first semiconductor region, a third semiconductor region ( 130, 330 ) above the second semiconductor region, a fourth semiconductor region ( 140, 340 ) above the third semiconductor region, a fifth semiconductor region ( 150, 350 ) above the second semiconductor region and at least partially contiguous with the fourth semiconductor region, a sixth semiconductor region ( 160, 360 ) above and electrically shorted to the fifth semiconductor region, and an electrically insulating layer ( 180, 380 ) above the fourth semiconductor region and the fifth semiconductor region. A junction ( 145, 345 ) between the fourth semiconductor region and the fifth semiconductor region forms a zener diode junction, which is located only underneath the electrically insulating layer. In one embodiment, a seventh semiconductor region ( 170 ) circumscribes the third, fourth, fifth, and sixth semiconductor regions.
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