LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

A light emitting diode and a method for manufacturing the same are provided to prevent collision between an undoped semiconductor layer and a doped semiconductor layer by forming a superlattice structure including a lamination of the undoped semiconductor layer and the doped semiconductor layer. An n type semiconductor layer(30) is formed on an upper surface of a substrate(10). An active layer(40) is formed on an upper surface of the n type semiconductor layer. A p type semiconductor layer(50) is formed on an upper surface of the active layer. A p electrode(60) is formed on an upper surface of the p type semiconductor layer. An n electrode(70) is formed on the n type semiconductor layer having an exposed part. One of the n type semiconductor layer and the p type semiconductor layer is formed with a superlattice structure including a lamination of an undoped semiconductor layer and a doped semiconductor layer. The n type semiconductor layer and the p type semiconductor layer are nitrification gallium semiconductor layer.