发明名称 |
Thin-film transistor formed on insulating substrate |
摘要 |
There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
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申请公布号 |
US7309900(B2) |
申请公布日期 |
2007.12.18 |
申请号 |
US20050085111 |
申请日期 |
2005.03.22 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO.,LTD. |
发明人 |
NAKANO FUMIKI;KAWACHI GENSHIRO;NAKAZAKI YOSHIAKI;TSUBOI SHINZO;ENDO TAKAHIKO;KATO TOMOYA |
分类号 |
H01L29/76;H01L21/336;H01L21/77;H01L21/8236;H01L21/84;H01L27/12;H01L29/04;H01L29/786 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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